The National Centre for Research and Development



Small Grant Scheme; Level: PhD; Discipline: electronics; ID: 210052



Project title: Study of the mechanism of initial growth of the 3C-SiC carbonization layer on the silicon substrate by Chemical Vapor Deposition (CVD)  


Acronym: CUBSIC


Project Promoter: Institute of Electronic Materials Technology


Project cost (EUR): 94 923


Grant amount (EUR): 94 923

Duration: 36 months






Project summary:

The aim of this project is to optimize the growth conditions of a carbonization layer of 3C-SiC on a different Si substrate to obtain relaxed interface between these two materials, which is crucial for obtaining high-tech electronic devices commonly used by everyone. Moreover, this solution makes it possible to  produce new generation electronic devices compatible with present silicon technology. The goal includes understanding and developing the growth process of the 3C buffer layer on the silicon substrate, which results in optimization of the growth technology. After having achieved the set goal, the optimized 3C-SiC on the Si substrate will be obtained, which could lead to the massive production of new, much faster electronic devices. The correlation between  the crystalline quality of grown 3C layers, as well as both the process parameters and different Si substrates will be performed. Due to the potential offered by this material and its applicability to science and industry, it seems possible to develop the branch of high-tech electronics based on 3C-SiC on Si and open new scientific opportunities.


The National Centre for Research and Development
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